Direction:Physics (quantum effects in nanostructure)
Position:Full Professor
Graduated from Tbilisi State University (Physics) 1982. PhD in Physics from Moscow State University Moscow, Russia, 1991. Research-Quantum Physics, Nanotechnology. Work experience – Joint Institute of Nuclear Research, Dubna, Russia 1982-1984; Moscow State University, Moscow Russia 1986-1992; Paul Sheerer Institute, Zurich, Switzerland 1993; Physical Technical Institute (PTB), Braunschweig, Germany, 1994; Technical University of Denmark, Lyngby Denmark, 1994-1997, Borealis Technical Ltd., Portland OR, US 1997-2007; Tbilisi State University, 2007-2010. San Digo State University, Georgia Faculty, 2019-2022; At Ilia State University from 2011.
Scientific interests / research interests
- Geometry-induced quantum effects
- Electronic, optical and magnetic properties of periodic nanostructures
- Energy converters with nanograting layers
- High temperature superconductivity
Tavkhelidze, L. Jangidze, Z. Taliashvili, N. E. Gorji , G-Doping-Based Metal-Semiconductor Junction
Coatings, 11, 945 (2021). https://doi.org/10.3390/coatings11080945
Tavkhelidze, A. Bibilashvili, L. Jangidze, N.E. Gorji , Fermi-Level Tuning of G-Doped Layers Nanomaterials 11, 505 (2021). https://doi.org/10.3390/nano11020505
Tavkhelidze, G-doping junction-formation mechanism, Semicond. Sci. Technol. 35 075005 (2020). https://doi.org/10.1088/1361-6641/ab8703
C.Samoila, D. Ursutiu, A. Tavkhelidze, L. Jangidze, Z. Taliashvili, G. Skhiladze and M. H. Tierean Nanograting layers of Si, Nanotechnology 31 035301 (2020). https://doi.org/10.1088/1361-6528/ab4889
Bayramov, E. Alizade, S. Mammadov, A. Tavkhelidze, N. Mamedov, Y. Aliyeva, K. Ahmedova, S. Asadullayeva, L. Jangidze, and G. Skhiladze, Optical properties of surface grated Si-based multilayer structure, J. Vac. Sci. Technol. B 37, 061807 (2019). https://doi.org/10.1116/1.5120799
Tavkhelidze,L. Jangidze andG. Skhiladze, G-doping based nanostructured p-p(v) junction,
Mater. Res. Express, 6, 075049 (2019) https://doi.org/10.1088/2053-1591/ab179a
Tavkhelidze, G. Grabecki, L. Jangidze, I. Yahniuk, Z. Taliashvili, and B. Taliashvili, Negative Magnetoresistance in Si Nanograting Layers, Phys. Status Solidi A, 216, 1800693 (2019). https://doi.org/10.1002/pssa.201800693
Tavkhelidze, L. Jangidze, M. Mebonia, K. Piotrowski, J. Więckowski, Z. Taliashvili, G. Skhiladze and L. Nadaraia, Geometry-induced quantum effects in periodic nanostructures, Physica Staus Solidi A, 214 (7), 1700334 (2017). https://doi.org/10.1002/pssa.201700334
Kakulia , A. Tavkhelidze, V. Gogoberidze, M. Mebonia, Density of quantum states in quasi-1D layers, Physica E, v. 78, pp. 49-55 (2016). http://dx.doi.org/10.1016/j.physe.2015.11.033
Tavkhelidze, Geometry-induced electron doping in periodic semiconductor nanostructures, Physica E, v. 60, pp. 4-10 (2014). https://doi.org/10.1016/j.physe.2014.01.028
Taliashvili, A. Tavkhelidze, L. Jangidze, Y. Blagidze, Vacuum nanogap formation in multilayer structures by an adhesion-controlled process, Thin Solid Films, v. 542, pp 399-403 (2013). https://doi.org/10.1016/j.tsf.2013.06.089
Jangidze, A. Tavkhelidze, Y. Blagidze, and Z. Taliashvili, Electroplating of Conformal Electrodes for Vacuum Nanogap Tunnel Junction, J. Electrochem. Soc., 159 (7), D413-D417 (2012). doi:10.1149/2.025207jes
N. Tavkhelidze, Nanostructured electrodes for thermionic and thermo-tunnel devices, J. Appl. Phys. 108, 044313 (2010). https://doi.org/10.1063/1.3464256
Tavkhelidze, Large enhancement of the thermoelectric figure of merit in a ridged quantum well, Nanotechnology, 20, 405401 (2009). https://doi.org/10.1088/0957-4484/20/40/405401
Tavkhelidze, V. Svanidze, and L. Tsakadze, Thermotunnel refrigerator with vacuum/insulator tunnel barrier: A theoretical analysis, J. Vac. Sci. Technol. A, v.26, pp. 5-7, (2008). https://doi.org/10.1116/1.2803717
Tavkhelidze, V. Svanidze and I. Noselidze, Fermi gas energetics in low-dimensional metals of special geometry, J. Vac. Sci. Technol. B, v. 25, p. 1270, (2007). https://doi.org/10.1116/1.2753852
Tavkhelidze, A. Bibilashvili, L. Jangidze, A. Shimkunas, P. Mauger, G. F. Rempfer, L. Almaraz, T. Dixon and M. E. Kordesch, Observation of Quantum Interference Effect in Solids, J. Vac. Sci. Technol. B 24, p. 1413 (2006). https://doi.org/10.1116/1.2198856
A.N.Tavkhelidze and J. Mygind, Low-frequency noise in Single Electron Tunnelling transistor, J. Appl. Phys., v.83, pp. 310-317, (1998). https://doi.org/10.1063/1.366685
L.S.Kuzmin, Yu.A.Pashkin, A.N.Tavkhelidze, F.J.Ahlers, T.Weimann, D.Quenter, and J.Niemeyer, An All-Chromium Single Electron Transistor – a Possible Element of Single Electronics, Appl. Phys. Lett. 68, p. 2902 (1996). https://doi.org/10.1063/1.116326
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